Download e-book for iPad: Adsorption of Molecules on Metal, Semiconductor and Oxide by K. Christmann, H. J. Freund, J. Kim, B. Koel, H. Kuhlenbeck,

By K. Christmann, H. J. Freund, J. Kim, B. Koel, H. Kuhlenbeck, M. Morgenstern, C. Panja, G. Pirug, G. Rupprechter, E. Samano, G.A. Somorjai

ISBN-10: 3540254846

ISBN-13: 9783540254843

ISBN-10: 3540258485

ISBN-13: 9783540258483

Surface technological know-how is known as a comparatively younger medical self-discipline, thinking about the actual and chemical houses of phenomena on fresh and lined stable surfaces, studied lower than various stipulations. The adsorption of atoms and molecules on reliable surfaces is, for instance, this kind of , attached with kind of drastic alterations of all floor homes. An adsorption occasion is usually saw in nature and located to be of technical significance in lots of business approaches. therefore, floor technology is interdisciplinary through its very nature, and as such a tremendous middleman among primary and utilized research.

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Extra info for Adsorption of Molecules on Metal, Semiconductor and Oxide Surfaces (Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology - New Series / Condensed Matter)

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99Our]. Comparatively few studies have been performed with Ge, but its behavior with respect to hydrogen appears to be quite similar to Si; again, mono and dihydrides are formed upon exposure to H atoms. To some extent, this is also true for the diamond surfaces. 10−4 Remarks no adsorption of molecular hydrogen exposure to H (D) atoms Ref. 85Pat 02Zec activation barrier ca. 8 eV can be lowered by dynamical distortions of Si surface atoms phonon-assisted sticking only 00Zim at small H coverages; at medium and larger coverages a barrier-free autocatalytic pathway exists second harmonic generation 96Han (SHG) sum frequency vibrational spectroscopy and SHG 01Mao exposure to H atoms 87Mha exposure to H atoms.

P. 111 silicon single crystal surfaces, without violating the principle of detailed balancing. Due to space limitations, we cannot enter this interesting topic and refer instead to some selected references [93Wu], [94Bre], [94Kra], 95Kol2], [95Jin], [00Peh], [00Zim]. A somewhat more general overview of the Si + H interaction has been given by Oura et al. [99Our]. Comparatively few studies have been performed with Ge, but its behavior with respect to hydrogen appears to be quite similar to Si; again, mono and dihydrides are formed upon exposure to H atoms.

111 Remarks Ref. 1 General remarks A quantity that largely characterizes a given hydrogen adsorption complex is the strength of the bond(s) formed between the adsorbed hydrogen atom (or molecule) and the surface atoms of the substrate, EB. We have seen that in the case of non-activated associative adsorption EB equals the adsorption energy, Ead. Thermodynamically, Ead simply is the energy released by the system upon adsorption and counted negatively. We recall that in the case of activated adsorption an additional activation energy of adsorption, E*ad comes into play.

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Adsorption of Molecules on Metal, Semiconductor and Oxide Surfaces (Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology - New Series / Condensed Matter) by K. Christmann, H. J. Freund, J. Kim, B. Koel, H. Kuhlenbeck, M. Morgenstern, C. Panja, G. Pirug, G. Rupprechter, E. Samano, G.A. Somorjai


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